1/4 target data february, 21 2002 PD57006-01 rf power transistors the ldmost plastic family n-channel enhancement-mode lateral mosfets ? excellent thermal stability ? common source configuration ? p out = 6 w with 15 db gain @ 945 mhz / 28v ? new leadless plastic package description the PD57006-01 is a common source n-channel, enhancement-mode lateral field-effect rf power transistor. it is designed for high gain, broad band commercial and industrial applications. it operates at 28 v in common source mode at frequencies of up to 1 ghz. PD57006-01 boasts the excellent gain, linearity and reliability of sts latest ldmos technology mounted in the innovative leadless smd plastic package, powerflat?. it is ideal for digital cellular bts applications requiring high linearity. absolute maximum ratings (t case = 2\5 c) symbol parameter value unit v (br)dss drain-source voltage 65 v v gs gate-source voltage 20 v i d drain current 1 a p diss power dissipation (@ tc = 70 c) tbd w tj max. operating junction temperature 150 c t stg storage temperature -65 to +150 c thermal data r th(j-c) junction -case thermal resistance tbd c/w order code PD57006-01 branding PD57006-01 powerflat ? (5x5)
PD57006-01 2/4 electrical specification (t case = 25 c) static dynamic symbol test conditions min. typ. max. unit v (br)dss v gs = 0 v i d = 10 ma 65 i dss v gs = 0 v v ds = 28 v 1 m a i gss v gs = 20 v v ds = 0 v 1 m a v gs(q) v ds = 28 v i d = 70 ma 2.0 5.0 v v ds(on) v gs = 10 v i d = 0.5 a 0.9 v g fs v ds = 10 v i d = 800 ma 0.58 mho c iss v gs = 0 v v ds = 28 v f = 1 mhz 27 pf c oss v gs = 0 v v ds = 28 v f = 1 mhz 14 pf c rss v gs = 0 v v ds = 28 v f = 1 mhz 0.9 pf symbol test conditions min. typ. max. unit p out v dd = 28 v i dq = 70 ma f = 945 mhz 6w g p v dd = 28 v i dq = 70 ma p out = 6 w f = 945 mhz 14 15 db h d v dd = 28 v i dq = 70 ma p out = 6 w f = 945 mhz 45 50 % load mismatch v dd = 28 v i dq = 70 ma p out = 6 w f = 945 mhz all phase angles 10:1 vswr typical input impedance typical drain load impedance g d s z dl zin sc13140 pd57006 freq. mhz z in ( w )z dl ( w ) 925 tbd tbd 945 tbd tbd 960 tbd tbd pin connection top view impedance data
3/4 PD57006-01 mm inch min. typ. max min. typ. max a 0.90 1.00 0.035 0.039 a1 0.02 0.05 0.001 0.002 a3 0.24 0.009 b 0.43 0.51 0.58 0.017 0.020 0.023 c 0.64 0.71 0.79 0.025 0.028 0.031 d 5.00 0.197 e 5.00 0.197 e2 2.49 2.57 2.64 0.098 0.101 0.104 e 1.27 0.050 dim. powerflat ? mechanical data ref. 7359038a
PD57006-01 4/4 information furnished is believed to be accurate and reliable. however, stmicroelectronics assumes no responsibility for the co nsequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. no license is granted by implication or otherwise under any patent or patent rights of stmicroelectronics. specifications mentioned in this publicati on are subject to change without notice. this publication supersedes and replaces all information previously supplied. stmicroelectronics prod ucts are not authorized for use as critical components in life support devices or systems without express written approval of stmicroelectro nics. the st logo is registered trademark of stmicroelectronics a 2002 stmicroelectronics - all rights reserved all other names are the property of their respective owners. stmicroelectronics group of companies australia - brazil - canada - china - finland - france - germany - hong kong - india - israel - italy - japan - malaysia - malta - morocco - singapore - spain - sweden - switzerland - united kingdom - u.s.a. http://www.st.com
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